Electron spin filtering by thin GaNAs/GaAs multiquantum wells

Electron spin filtering by thin GaNAs/GaAs multiquantum wells

Substantial Temperature Dependence of Transverse Electron g*factor in Lead Chalcogenide Multiquantum Wells

We report significant temperature dependence of the transverse electron g*-factor in symmetric lead chalcogenide multi-quantum wells (MQWs). The g*-factor values were extracted from the electron Larmor precessions recorded by means of a circularly polarized pump probe technique under the influence of transverse external magnetic field (Voigt geometry) in the temperature range between 10 and 150...

Impact ionization coefficients in strained inGaAs/lnAIAs multiquantum wells

We have measured electron and hole impact ionization coefficients in biaxially strained In,Gat -&JIn,,Alll -,,As (0.44 <x <0.62,0.44 <y < 0.62) multiquantum wells for the first time. It is seen that o/a is enhanced due to strain-induced changes in band gap, band offsets, and bandstructure for tensile strain in the well and compressive strain in the barrier. The results have been interpreted by ...

Enhancement of exciton binding energies in ZnOÕZnMgO multiquantum wells

Si/SiGe Quantum Devices and Quantum Wells: Electron Spin Coherence

1 Department of Physics, University of Wisconsin, Madison, Wisconsin 53706, USA 2 Cavendish Laboratory, Madingly Road, Cambridge CB3 OHE, UK 3 IBM Research Division, T. J. Watson Research Center, New York 10598, USA 4 Department of Physics, Simon Fraser University, Burnaby, BC V5A 1S6, Canada 5 Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA 6 Depart...